symbol v ds v gs i dm t j , t stg symbol typ max 58 80 94 120 r jl 37 50 maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w junction and storage temperature range -55 to 150 c thermal characteristics t a =70c 1.1 w power dissipation t a =25c p d 1.56 a t a =70c 1.9 pulsed drain current b 9 continuous drain current a t a =25c i d 2.3 drain-source voltage 55 v gate-source voltage 12 v absolute maximum ratings t a =25c unless otherwise noted parameter maximum units ao6414 n-channel enhancement mode field effect transistor features v ds (v) = 55v i d = 2.4a (v gs = 4.5v) r ds(on) < 160m (v gs = 4.5v) r ds(on) < 200m (v gs = 2.5v) general description the ao6414 uses advanced trench technology to provide excellent r ds(on) and low gate charge. it offers operation over a wide gate drive range from 2.5v to 12v. this device is suitable for use as a load switch. standard product ao6414 is pb-free (meets rohs & sony 259 specifications). AO6414L is a green product ordering option. ao6414 and a o6414l are electrically identical. g d d s d d 1 2 3 6 5 4 tsop-6 top view g d s alpha & omega semiconductor, ltd.
ao6414 symbol min typ max units bv dss 55 v 0.002 1 t j =55c 5 i gss 100 na v gs(th) 0.6 1.3 2 v i d(on) 10 a 125 160 t j =125c 175 210 157 200 m g fs 11 s v sd 0.78 1 v i s 1.9 a c iss 214 300 pf c oss 31 pf c rss 12.6 pf r g 1.3 3 q g 2.6 3.3 nc q gs 0.6 nc q gd 0.8 nc t d(on) 2.3 ns t r 2.4 ns t d(off) 16.5 ns t f 2ns t rr 20 30 ns q rr 17 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =25v, i d =2.4a gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =25v, r l =10.4 , r gen =3 reverse transfer capacitance turn-on rise time turn-off delaytime gate resistance v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =2.4a diode forward voltage i s =1a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =25v, f=1mhz output capacitance r ds(on) static drain-source on-resistance v gs =4.5v, i d =2.4a m v gs =2.5v, i d =1.5a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v v ds =44v, v gs =0v a gate-source leakage current v ds =0v, v gs =12v i f =2.4a, di/dt=100a/ s i f =2.4a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =10ma, v gs =0v i dss zero gate voltage drain current a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev0: nov. 2005 alpha & omega semiconductor, ltd.
ao6414 typical electrical and thermal characteristics 0 2 4 6 8 10 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 3.5v 2.5v 4.5v 10v 0 2 4 6 8 1 1.25 1.5 1.75 2 2.25 2.5 v gs(volts) figure 2: transfer characteristics i d (a) 100 120 140 160 180 200 012345 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v,1.5a v gs =4.5v, 2.4a 50 100 150 200 250 300 350 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v i d =2.4a 25c 125c alpha & omega semiconductor, ltd.
ao6414 typical electrical and thermal characteristic s 0 1 2 3 4 5 0123 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to - ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 s v ds =25v i d =2.4a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =80c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd.
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